Intrinsic Electron Mobility Limits in beta-Ga2O3

Abstract

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and strong bond ionicity. Based on the theoretical and experimental analysis, we provide an empirical expression for electron mobility in beta-Ga2O3 that should help calibrate its potential in high performance device design and applications.

References in corpus (4)

• Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide
• High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
• Theory of bound polarons in oxide compounds
• Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Cited by in corpus (38)

• First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
• Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
• High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
• Donors and Deep Acceptors in $\beta$-Ga2O3
• Band gap and band offset of Ga${}_2$O${}_3$ and (Al${}_x$Ga${}_{1-x}$)${}_2$O${}_3$ alloys
• Delta-doped Beta- Gallium Oxide Field Effect Transistor
• Metal$/BaTi{O}_3/\beta -G{a}_2{O}_3$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
• SnO/$\beta$-Ga2O3 vertical $pn$ heterojunction diodes
• Electron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement
• Structural, electronic, elastic, power and transport properties of $\beta$-Ga${}_2$O${}_3$ from first-principles
• Low Temperature Homoepitaxy Of (010) $\beta$-Ga${}_2$O${}_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window
• Electron and hole mobility of rutile GeO${}_2$ from first principles: an ultrawide-band-gap semiconductor for power electronics
• Complex ${\mathrm{Ga}}_2{\mathrm{O}}_3$ Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials
• Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO${}_2$
• Quasiparticle band structure and optical properties of rutile GeO${}_2$, an ultra-wide-band-gap semiconductor
• Influence of Polymorphism on the Electronic Structure of Ga${}_2$O${}_3$
• Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
• MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
• Vibrational and electron-phonon coupling properties of \b{eta}-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
• Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al${}_x$Ga${}_{1-x}$)${}_2$O${}_3$
• Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
• A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors
• Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion
• Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in $\beta$-Ga${}_2$O${}_3$
• Deep-recessed $\beta$-Ga${}_2$O${}_3$ delta-doped field effect transistors with in situ epitaxial passivation
• Record-High Electron Mobility and Controlled Low 10${}^{15}$ cm${}^{-3}$ Si-doping in (010) $\beta$-Ga${}_2$O${}_3$ Epitaxial Drift Layers
• Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals
• Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
• Low field electron mobility in $\alpha -G{a}_2{O}_3$: An ab-initio approach
• Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
• Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
• Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
• Design of Ga2O3 Modulation Doped Field Effect Transistors
• Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
• The electrical conductivity tensor of $\beta$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
• Nb${}_2$O${}_5$ high-k dielectric enabled electric field engineering of $\beta$-Ga${}_2$O${}_3$ metal-insulator-semiconductor (MIS) diode
• Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
• Controlling Ultrafast Excitations in Germanium:The Role of Pump-Pulse Parameters and Multi-Photon Resonances