Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Abstract

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.

18 pages, 4 figures, published in Applied Physics Letters

References in corpus (1)

• Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Cited by in corpus (4)

• Intrinsic Electron Mobility Limits in beta-Ga2O3
• Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
• Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
• Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells