116 citations · 188 across the 2 of their papers we have counts for
3 papers
cond-mat.mes-hall2017
High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
SM Islam, Vladimir Protasenko, Kevin Lee +5
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here th…
cond-mat.mtrl-sci2016★ 72 cited
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
cond-mat.mtrl-sci2016★ 116 cited
MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
SM Islam, Kevin Lee, Jai Verma +5
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by contro…