Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Abstract

The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.

7 pages, 5 figures

References in corpus (2)

• Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
• Polarization-engineered GaN/InGaN/GaN tunnel diodes

Cited by in corpus (10)

• GdN Nanoisland-Based GaN Tunnel Junctions
• Giant polarization charge density at lattice-matched GaN/ScN interfaces
• Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
• MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
• N-polar GaN/AlN resonant tunneling diodes
• Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
• Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures
• N-polar GaN p-n junction diodes with low ideality factors
• Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
• Study of simulations of double graded InGaN solar cell structures