93 citations · 176 across the 5 of their papers we have counts for
5 papers
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…
Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
John Simon, Kevin L. Schulte, Kelsey Horowitz +3
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved perform…
Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena, John Simon, Albert +12
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abr…
Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
J. Simon, Z. Zhang, K. Goodman +3
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap Ga…
Optically induced transport properties of freely suspended semiconductor submicron channels
C. Rossler, K. -D. Hof, S. Manus +6
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaA…