Optically induced transport properties of freely suspended semiconductor submicron channels

Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

References in corpus (3)

• Suppression of Spin Relaxation in Submicron InGaAs Wires
• Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells
• Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

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• Magneto-electrical subbands of freely suspended quantum point contacts
• Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires
• Chemical Potential Fluctuations in Topological Insulator (Bi${}_{0.5}$Sb${}_{0.5}$)${}_2$Te${}_3$ Films Visualized by Photocurrent Spectroscopy
• Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
• Coherent Electron Optics with Ballistically Coupled Quantum Point Contacts