Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells
arXiv:0705.2428 · doi:10.1103/PhysRevB.76.085304
Abstract
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.
21 pages, 6 figures, submitted to Phys. Rev. B
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Cited by in corpus (21)
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