Dynamics of Long-Living Excitons in Tunable Potential Landscapes
arXiv:cond-mat/0509142 · doi:10.1016/j.physe.2005.12.036
Abstract
A novel method to experimentally study the dynamics of long-living excitons in coupled quantum well semiconductor heterostructures is presented. Lithographically defined top gate electrodes imprint in-plane artificial potential landscapes for excitons via the quantum confined Stark effect. Excitons are shuttled laterally in a time-dependent potential landscape defined by an interdigitated gate structure. Long-range drift exceeding a distance of 150 um at an exciton drift velocity > 1000 m/s is observed in a gradient potential formed by a resistive gate stripe.
4 pages, 4 figures. To appear in Phys. E (MSS-12-Proceedings)
References in corpus (2)
Cited by in corpus (4)
- Drift mobility of long-living excitons in coupled GaAs quantum wells
- Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells
- Quantum Signature Blurred by Disorder in Indirect Exciton Gases
- Pouring Excitons into a Two-Dimensional Bucket: Equilibration of Indirect Excitons in an In-Plane Harmonic Potential