Forming and confining of dipolar excitons by quantizing magnetic fields

Abstract

We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11}c{m}^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11}c{m}^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures.

4.3 Pages, 4 Figures

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Cited by in corpus (7)

• Exciton effective mass enhancement in coupled quantum wells in electric and magnetic fields
• Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer
• Collective electronic excitation in a trapped ensemble of photogenerated dipolar excitons and free holes revealed by inelastic light scattering
• Spatially and time-resolved imaging of transport of indirect excitons in high magnetic fields
• Anisotropic superfluidity of two-dimensional excitons in a periodic potential
• Transport of Indirect Excitons in High Magnetic Fields
• Overflow of a dipolar exciton trap at high magnetic fields