Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer
arXiv:1403.3956 · doi:10.1103/PhysRevB.90.165430
Abstract
The formation of the roton-maxon excitation spectrum and the roton instability effect for a weakly correlated Bose gas of dipolar excitons in a semiconductor layer are predicted. The stability diagram is calculated. According to our numerical estimations, the threshold of the roton instability for Bose-Einstein condensed exciton gas with roton-maxon spectrum is achievable experimentally, e.g., in GaAs semiconductor layers.
9 pages, 3 figures; published version
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