Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

Abstract

We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.

References in corpus (3)

• Photoconductance Quantization in a Single-Photon Detector
• Optically induced transport properties of freely suspended semiconductor submicron channels
• Nano-ploughed Josephson Junctions as on-chip Radiation Sources

Cited by in corpus (10)

• Spin dynamics in semiconductors
• Photocurrent and Photoconductance Properties of a GaAs Nanowire
• Surface Plasmon Enhanced Photoconductance of Gold Nanoparticle Arrays with Incorporated Alkane Linkers
• Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction
• Local photocurrent generation in thin films of the topological insulator Bi2Se3
• Chemical Potential Fluctuations in Topological Insulator (Bi${}_{0.5}$Sb${}_{0.5}$)${}_2$Te${}_3$ Films Visualized by Photocurrent Spectroscopy
• Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot
• Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
• Electron spin relaxation in n-type InAs quantum wires
• Enlarged magnetic focusing radius of photoinduced ballistic currents