Local photocurrent generation in thin films of the topological insulator Bi2Se3

Abstract

We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

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Cited by in corpus (12)

• Direct visualization of current induced spin accumulation in topological insulators
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• Photon Drag Effect in (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$ Three Dimensional Topological Insulators
• Spin Hall photoconductance in a 3D topological insulator at room temperature
• Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
• Persistent Optical Gating of a Topological Insulator
• Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light
• Transport in two-dimensional disordered semimetals
• Andreev reflection at the edge of a two-dimentional semimetal
• Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5
• Chemical Potential Fluctuations in Topological Insulator (Bi${}_{0.5}$Sb${}_{0.5}$)${}_2$Te${}_3$ Films Visualized by Photocurrent Spectroscopy
• Current amplification and relaxation in Dirac systems