Transport in two-dimensional disordered semimetals

Abstract

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complimentary mapping on resistor networks. In the presence of smooth disorder and in the limit of weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.

5 pages, 4 figures, plus supplemental material. V2: minor clarifications and an additional reference. V3: as published

References in corpus (6)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• The electronic properties of bilayer graphene
• Random resistor network model of minimal conductivity in graphene
• The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
• Effective medium theory for disordered two-dimensional graphene

Cited by in corpus (3)

• Magnetoresistance in two-component systems
• Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates
• Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer