Model for the magnetoresistance and Hall coefficient of inhomogeneous graphene

Abstract

We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent resistivity. We calculate the longitudinal resistivity ρ_{xx} and Hall resistivity ρ_{xy} as a function of field for this system, using the effective-medium approximation. The conductivity tensors of the individual puddles are calculated using a Boltzmann approach suit- able for the band structure of graphene near the Dirac points. The resulting resistivity agrees well with experiment, provided that the relaxation time is weakly field-dependent. The calculated Hall resistivity has the sign of the majority carrier and vanishes when there are equal number of n and p type puddles.

5 pages, 4 figures

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• Quantum pumping in graphene with a perpendicular magnetic field
• Equivalence of Effective Medium and Random Resistor Network models for disorder-induced unsaturating linear magnetoresistance
• Transport in two-dimensional disordered semimetals
• Evidence for topological proximity effect in graphene coupled to topological insulator
• Phonon-drag magnetoquantum oscillations in graphene
• Strong magnetoresistance in a graphene Corbino disk at low magnetic fields
• New Losses Mechanism in Graphene Nanoresonators due to the Synthetic Electric Fields caused by Inherent Out-of-Plain Membrane Corrugations