Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates

Abstract

The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain-dependence of the band structure of HgTe QWs to address this limitation. We use $\text{CdTe}-{\text{Cd}}_{0.5}{\text{Zn}}_{0.5}\text{Te}$ strained-layer superlattices on GaAs as virtual substrates with adjustable lattice constant to control the strain of the QW. We present magneto-transport measurements, which demonstrate a transition from a semi- metallic to a 2D-TI regime in wide QWs, when the strain is changed from tensile to compressive. Most notably, we demonstrate a much enhanced energy gap of 55 meV in heavily compressively strained QWs. This value exceeds the highest possible gap on common II-VI substrates by a factor of 2-3, and extends the regime where the topological conductance prevails to much higher temperatures.

arXiv comment8 pages, 6 figures (including supplementary section), accepted for publication in Physical Review Letters

References in corpus (7)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Nonlocal edge state transport in the quantum spin Hall state
• Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
• Spin polarization of the quantum spin Hall edge states
• Band structure of semimagnetic Hg1-yMnyTe quantum wells
• Helical edge resistance introduced by charge puddles
• Transport in two-dimensional disordered semimetals

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