Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
arXiv:2509.22185 · doi:10.1126/sciadv.adz2408
Abstract
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.
References in corpus (42)
- Topological Insulators
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Order and the Quantum Spin Hall Effect
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Quantum Spin Hall Effect
- The (High Quality) Topological Materials In The World
- Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Nonlocal edge state transport in the quantum spin Hall state
- Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Spin polarization of the quantum spin Hall edge states
- Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
- Helical edge resistance introduced by charge puddles
- Nondissipative Spin Hall Effect via Quantized Edge Transport
- Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide BiBr
- Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
- Edge Transport in the Trivial Phase of InAs/GaSb
- Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
- Electric control of topological phase transitions in Dirac semimetal thin films
- Pressure and temperature driven phase transitions in HgTe quantum wells
- Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
- Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates
- Temperature-induced topological phase transition in HgTe quantum wells
- Non-local transport via edge-states in InAs/GaSb coupled quantum wells
- Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
- Edge transport in InAs and InAs/GaSb quantum wells
- Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures
- Robustness of Quantum Spin Hall Effect in an External Magnetic Field
- Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
- Temperature-driven transition from a semiconductor to a topological insulator
- Engineering quantum spin Hall insulators by strained-layer heterostructures
- Intrinsic point defects and the - and -type dopability of the narrow gap semiconductors GaSb and InSb
- Hidden edge Dirac point and robust quantum edge transport in InAs/GaSb quantum wells
- Energy gap tuning and gate-controlled topological phase transition in InAs/InGaSb composite quantum wells
- Effects of charge dopants in quantum spin Hall materials
- Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
- Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
- Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence