Effects of charge dopants in quantum spin Hall materials
arXiv:2206.01613 · doi:10.1103/PhysRevLett.130.086202
Abstract
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
arXiv comment5 pages, 3 figures; companion paper to arXiv:2209.03283, Phys. Rev. B 107, 085421 (2023), v3 contains modifications resulting from the review process
References in corpus (29)
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Edge conduction in monolayer WTe2
- Band structure of semimagnetic Hg1-yMnyTe quantum wells
- Kondo effect in the helical edge liquid of the quantum spin Hall state
- Conductance of a helical edge liquid coupled to a magnetic impurity
- Ultra-high quality two-dimensional electron systems
- Resistance of helical edges formed in a semiconductor heterostructure
- Localization at the Edge of 2D Topological Insulator by Kondo Impurities with Random Anisotropies
- Spatially resolved study of backscattering in the quantum spin Hall state
- Antiferromagnetic s-d exchange coupling in GaMnAs
- Backscattering Between Helical Edge States via Dynamic Nuclear Polarization
- Helical edge states coupled to a spin bath: Current-induced magnetization
- Universal dephasing rate due to diluted Kondo impurities
- Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells
- Magnetic moments in a helical edge can make weak correlations seem strong
- Helical Liquids in Semiconductors
- Backscattering in helical edge states from a magnetic impurity and Rashba disorder
- Fractional quantum Hall effect in CdTe
- At which magnetic field, exactly, does the Kondo resonance begin to split? A Fermi liquid description of the low-energy properties of the Anderson model
- Emergent quantum Hall effects below mT in a two-dimensional topological insulator
- Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
- The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
- Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators
- Spin-orbit interactions in a helical Luttinger liquid with a Kondo impurity
- Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
- Protection of Edge transport in Quantum Spin Hall samples: Spin-Symmetry Based General Approach and Examples
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- Engineering axion insulator phase in superlattices with inversion symmetry breaking
- Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
- Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
- Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
- CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect
- Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
- Interaction- and phonon-induced topological phase transitions in double helical liquids
- Spin-Hall conductivity and optical characteristics of noncentrosymmetric quantum spin Hall insulators: the case of PbBiI
- Role of magnetic doping in topological HgTe and application of the Gram-Schmidt method for computing impurity states in quantum wells
- Edge Reconstruction in a Quantum Spin Hall Insulator
- From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins