Effects of charge dopants in quantum spin Hall materials
arXiv:2206.01613 · doi:10.1103/PhysRevLett.130.086202
Abstract
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
5 pages, 3 figures; companion paper to arXiv:2209.03283, Phys. Rev. B 107, 085421 (2023), v3 contains modifications resulting from the review process
References in corpus (12)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Kondo effect in the helical edge liquid of the quantum spin Hall state
- Conductance of a helical edge liquid coupled to a magnetic impurity
- Resistance of helical edges formed in a semiconductor heterostructure
- Spatially resolved study of backscattering in the quantum spin Hall state
- Helical edge states coupled to a spin bath: Current-induced magnetization
- Universal dephasing rate due to diluted Kondo impurities
- Fractional quantum Hall effect in CdTe
- Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
- Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
Cited by in corpus (12)
- Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
- Fast electrically switchable large gap quantum spin Hall states in MGeZ
- Engineering axion insulator phase in superlattices with inversion symmetry breaking
- Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
- Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
- CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect
- Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
- Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
- Interaction- and phonon-induced topological phase transitions in double helical liquids
- Spin-Hall conductivity and optical characteristics of noncentrosymmetric quantum spin Hall insulators: the case of PbBiI
- Role of magnetic doping in topological HgTe and application of the Gram-Schmidt method for computing impurity states in quantum wells
- Edge Reconstruction in a Quantum Spin Hall Insulator