The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors

Abstract

The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x}{Mn}_{x}N$, ${Ga}_{1-x}{Mn}_{x}As$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{apparent} value of the s-d exchange coupling $N_0\alpha$ is reduced. It is shown that the magnitude of this effect increases when x diminishes. Our model may explain an unusual behavior of electron spin splitting observed recently in those two materials in the Mn concentration range x <= 0.2%.

arXiv comment4 pages

References in corpus (10)

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• Theory of ferromagnetic (III,Mn)V semiconductors
• Spatial structure of an individual Mn acceptor in GaAs
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• Suppression of electron spin relaxation in Mn-doped GaAs
• Confinement engineering of s-d exchange interactions in GaMnAs quantum wells
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• Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
• Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
• Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
• Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
• From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins