Spatial structure of an individual Mn acceptor in GaAs

Abstract

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.

3 figures, submitted to PRL

References in corpus (2)

• Multiband tight-binding model of local magnetism in GaMnAs
• Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

Cited by in corpus (9)

• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Mapping the wavefunction of transition metal acceptor states in the GaAs surface
• Single exciton spectroscopy of single-Mn doped InAs quantum dots
• Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
• Magnetic circular dichroism from the impurity band in III-V diluted magnetic semiconductors
• Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs
• Disorder, spin-orbit, and interaction effects in dilute ${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{As}$
• Inter-impurity and impurity-host magnetic correlations in semiconductors with low-density transition-metal impurities