Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface

Abstract

We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $\delta$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn${}_{\mathrm{Ga}}$) in the first subsurface layer. The sensitivity of the STM images to the specific local environment allows to distinguish between Mn interstitials with nearest neighbor As atoms (Int${}_{\mathrm{As}}$) rather than Ga atoms (Int${}_{\mathrm{Ga}}$), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for Int${}_{\mathrm{As}}$, both isolated and in pairs, and Mn${}_{\mathrm{Ga}}$ in the first subsurface layer are consistent with some experimental images hitherto not fully characterized.

19 pages, 4 figures, to be published in Phys. Rev. B

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• Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
• Interstitial Mn in (Ga,Mn)As: Binding energy and exchange coupling
• Cross-sectional STM of Mn-doped GaAs: theory and experiment
• Spatial structure of Mn-Mn acceptor pairs in GaAs
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• Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Cited by in corpus (7)

• Ion-beam modification of the magnetic properties of GaMnAs epilayers
• Magnetic interactions of substitutional Mn pairs in GaAs
• Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
• Tailoring the magnetism of GaMnAs films by ion irradiation
• Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
• Dimensionality effects in the LDOS of ferromagnetic hosts probed via STM: spin-polarized quantum beats and spin filtering
• Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies