High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Abstract

We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the 2-dimensional hole gas wavefunction, realized remarkably high ferromagnetic transition temperatures (TC). Significant reduction of compensative Mn interstitials by varying the growth sequence of the structures followed by low temperature annealing led to high TC up to 250 K. The heterostructure with high TC exhibited peculiar anomalous Hall effect behavior, whose sign depends on temperature.

18 pages, 4 figures

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• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
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• Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
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• Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $\delta$-layer
• Superefficient electric-field-induced spin splitting in strained p-type quantum wells
• Magnetism in Cr-doped ZnS: Density-functional theory studies
• Bipolar spintronics: From spin injection to spin-controlled logic
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• X-ray magnetic circular dichroism characterization of GaN/Ga1-xMnxN digital ferromagnetic heterostructure
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• Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient
• Noise studies of magnetization dynamics in dilute magnetic semiconductor heterostructures
• Static polarizability of two-dimensional hole gases
• The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
• Phase coherent transport in (Ga,Mn)As
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• Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni${}_{1-x}$Fe${}_x$O with hole doping
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• A single layer of Mn in a GaAs quantum well: a ferromagnet with quantum fluctuations
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• Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
• A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
• Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content
• High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures
• The role of resident electrons in manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
• Trends in Ferromagnetism in Mn doped dilute III-V alloys from a density functional perspective
• Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
• Extrapolated Elliptic Regularity and Application to the van Roosbroeck system of Semiconductors
• Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well