Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

Abstract

We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190 degree C and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170 K.

10 pages, 4 figures

References in corpus (4)

• Mn Interstitial Diffusion in (Ga,Mn)As
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping
• Enhanced annealing effect in an oxygen atmosphere on GaMnAs

Cited by in corpus (7)

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• Achieving High Curie Temperature in (Ga,Mn)As
• Spinodal nanodecomposition in magnetically doped semiconductors
• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
• GaMnN epitaxial films with high magnetization
• Iron-based n-type electron-induced ferromagnetic semiconductor
• Formation of Epitaxial MnBi Layers on (Ga,Mn)As