Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

Abstract

Heavily-alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low temperature molecular beam epitaxy utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible, optimized electronic, magnetic and structural properties are found in a narrow range of stoichiometric growth conditions. The Curie temperature of stoichiometric material is 150-165 K and independent of x within a large window of growth conditions while substitutional Mn content increases linearly, contradicting the prediction of the Zener Model of hole-mediated ferromagnetism.

arXiv comment12 pages, 3 figures

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• Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
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• Spinodal nanodecomposition in magnetically doped semiconductors
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• GaMnN epitaxial films with high magnetization
• An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs
• Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures
• Ferromagnetism and infrared electrodynamics of Ga${}_{1-x}$Mn${}_x$As}
• Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review