Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review
arXiv:2412.17473 · doi:10.1007/s11664-025-11923-6
Abstract
Extensive studies on the impact of bismuth incorporation into the (Ga,Mn)As prototype dilute ferromagnetic semiconductor (DFS) on its structural, magnetic and magnetotransport properties are summarized in this review. Thin epitaxial layers of the quaternary (Ga,Mn)(Bi,As) compound, containing up to 1% Bi and 6% Mn atoms, and the reference ternary (Ga,Mn)As compound, have been grown under either a compressive or tensile biaxial misfit strain by the low-temperature molecular-beam epitaxy technique with precisely optimized growth conditions. The high-resolution X-ray diffractometry measurements and transmission electron microscopy imaging of cross-sections across the sample interfaces have evidenced for high structural perfection of the DFS layers and sharp interfaces with the substrate. An addition of bismuth into the layers causes a small decrease in their ferromagnetic Curie temperature and a distinct increase in the coercive fields, as revealed by the superconducting quantum interference device magnetometry investigations. Most of all, the incorporation of a small atomic fraction of heavy Bi atoms, substituting As atoms in the layer, predominantly enhances the spin-orbit coupling strength in its valence band, considerably affecting electromagnetic properties of the layers. Investigations of magnetotransport properties of the DFS layers, performed on micro-Hall-bars prepared from the layers using electron-beam lithography patterning, reveal, as a result of Bi addition to the layers, significantly enhanced magnitudes of magnetoresistance, anomalous and planar Hall effects as well as the spin-orbit torque effect. The latter effect is of special interest for applications to the next generation non-volatile data storage and logic spintronic devices, utilizing electrically controlled magnetization reversal.
arXiv comment22 pages, 7 figures
References in corpus (31)
- Anomalous Hall effect
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
- Mn Interstitial Diffusion in (Ga,Mn)As
- Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
- Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
- Reorientation Transition in Single-Domain (Ga,Mn)As
- DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
- ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
- Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
- Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
- Weak localization in ferromagnets with spin-orbit interaction
- Impact of alloy disorder on the band structure of compressively strained GaBiAs
- Onset of ferromagnetism in low-doped GaMnAs
- Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
- Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
- Lithographic engineering of anisotropies in (Ga,Mn)As
- Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As
- The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As
- Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors
- On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
- Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films
- Electronic- and band-structure evolution in low-doped (Ga,Mn)As
- Theory of Weak Localization in Ferromagnetic (Ga,Mn)As
- Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy