Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

Abstract

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.

5 pages, 1 figure

References in corpus (5)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• A story of high-temperature ferromagnetism in semiconductors
• Lithographic engineering of anisotropies in (Ga,Mn)As
• Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
• An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

Cited by in corpus (5)

• Growth, strain and spin orbit torques in epitaxial NiMnSb films sputtered on GaAs
• Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review
• Micromagnetic study of a feasibility of the magnetic anisotropy engineering in nano-structured epitaxial films of (III,Mn)V ferromagnetic semiconductors
• Pair anisotropy in disordered magnetic systems
• From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins