Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
arXiv:1202.3295 · doi:10.1103/PhysRevLett.108.237203
Abstract
It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
arXiv comment5 pages, 1 figure
References in corpus (21)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Selfconsistent order-N density-functional calculations for very large systems
- Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
- Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
- Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- A story of high-temperature ferromagnetism in semiconductors
- Structural and paramagnetic properties of dilute Ga1-xMnxN
- Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
- Lithographic engineering of anisotropies in (Ga,Mn)As
- Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
- Temperature Dependence of the Dielectric Constant and Resistivity of Diluted Magnetic Semiconductors
- Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
- Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
- An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
- Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)
- Spin-orbit coupling effect in (Ga,Mn)As films: anisotropic exchange interactions and magnetocrystalline anisotropy
- The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg
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