activity
19992024
most citedHole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

1.5k citations · 5.1k across the 41 of their papers we have counts for

collaborators

35 papers

cond-mat.mtrl-sci2024★ 2 cited

Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling

D. Sztenkiel, K. Gas, N. Gonzalez Szwacki +7

We report magnetization changes generated by an electric field in ferromagnetic GaMnN grown by molecular beam epitaxy. Two classes of phenomena have been revealed. Firs…

cond-mat.mtrl-sci2016★ 27 cited

Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

S. Souma, L. Chen, R. Oszwaldowski +5

Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate n…

cond-mat.mtrl-sci2016★ 42 cited

Stretching magnetism with an electric field in a nitride semiconductor

D. Sztenkiel, M. Foltyn, G. P. Mazur +11

By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magneti…

cond-mat.mtrl-sci2015★ 19 cited

(Ga,Mn)As under pressure: a first-principles investigation

N. Gonzalez Szwacki, Jacek A. Majewski, T. Dietl

Electronic and magnetic properties of GaMnAs, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for and $12.…

cond-mat.mtrl-sci2014★ 10 cited

Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies

R. Adhikari, W. Stefanowicz, B. Faina +3

A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensiti…

cond-mat.mes-hall2014★ 31 cited

Experimental determination of Rashba spin-orbit coupling in wurtzite -GaN:Si

W. Stefanowicz, R. Adhikari, T. Andrearczyk +5

Millikelvin magnetotransport studies are carried out on heavily -doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy.…