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Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
D. Sztenkiel, K. Gas, N. Gonzalez Szwacki +7
We report magnetization changes generated by an electric field in ferromagnetic GaMnN grown by molecular beam epitaxy. Two classes of phenomena have been revealed. Firs…
Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
S. Souma, L. Chen, R. Oszwaldowski +5
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate n…
Stretching magnetism with an electric field in a nitride semiconductor
D. Sztenkiel, M. Foltyn, G. P. Mazur +11
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magneti…
(Ga,Mn)As under pressure: a first-principles investigation
N. Gonzalez Szwacki, Jacek A. Majewski, T. Dietl
Electronic and magnetic properties of GaMnAs, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for and $12.…
Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
R. Adhikari, W. Stefanowicz, B. Faina +3
A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensiti…
Theory of ferromagnetism driven by superexchange in dilute magnetic semiconductors
C. Simserides, J. A. Majewski, K. N. Trohidou +1
Magnetic properties of GaMnN are studied theoretically by employing a tight binding approach to determine exchange integrals characterizing the coupling betwee…
Origin of low-temperature magnetic ordering in Ga1-xMnxN
M. Sawicki, T. Devillers, S. Gałȩski +9
By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characteri…
Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
M. Birowska, C. Sliwa, J. A. Majewski +1
It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theor…
The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg
A. Navarro-Quezada, N. Gonzalez Szwacki, W. Stefanowicz +9
The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digit…
Anomalous Hall effect in field-effect structures of (Ga,Mn)As
D. Chiba, A. Werpachowska, M. Endo +4
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by…
Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films
I. A. Kowalik, A. Persson, M. Á. Niño +5
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermo…
Aggregation and magnetism of Cr, Mn, and Fe cations in GaN
N. Gonzalez Szwacki, J. A. Majewski, T. Dietl
A first-principles DFT-GGA+U study of the doping of GaN with Cr, Mn, or Fe confirms a strong tendency for the formation of embedded clusters occupying Ga sites of the wurtzite and…
Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
A. Bonanni, M. Sawicki, T. Devillers +16
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorgani…
Embedded magnetic phases in (Ga,Fe)N: the key role of growth temperature
A. Navarro-Quezada, W. Stefanowicz, Tian Li +9
The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and…
Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
A. Bonanni, A. Navarro-Quezada, Tian Li +8
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at…
Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N
W. Pacuski, P. Kossacki, D. Ferrand +8
A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduce…
On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
T. Jungwirth, Jairo Sinova, A. H. MacDonald +15
We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A ther…
Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
A. Bonanni, M. Kiecana, C. Simbrunner +8
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray…
Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
M. Yamanouchi, D. Chiba, F. Matsukura +2
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicula…
Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
K. Y. Wang, M. Sawicki, K. W. Edmonds +6
We demonstrate that low concentrations of a secondary magnetic phase in (Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without significantly degrading the Cu…
Reorientation Transition in Single-Domain (Ga,Mn)As
K-Y. Wang, M. Sawicki, K. W. Edmonds +5
We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC suscepti…
Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
M. Sawicki, F. Matsukura, A. Idziaszek +7
It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concent…
In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
M. Sawicki, K-Y. Wang, K. W. Edmonds +9
We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it…
Mn Interstitial Diffusion in (Ga,Mn)As
K. W. Edmonds, P. Boguslawski, K. Y. Wang +8
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature anneal…