Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
arXiv:1412.3904 · doi:10.1103/PhysRevB.91.205204
Abstract
A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., -(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between -type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.
5 pages, 5 figures
References in corpus (8)
- Optically probing the fine structure of a single Mn atom in an InAs quantum dot
- Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance
- Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
- Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N
- Suppression of electron spin relaxation in Mn-doped GaAs
- Confinement engineering of s-d exchange interactions in GaMnAs quantum wells
- Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
- Excitonic giant Zeeman effect in GaN:Mn^3+
Cited by in corpus (4)
- Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
- Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
- Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
- From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins