Suppression of electron spin relaxation in Mn-doped GaAs

Abstract

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

4 pages, 4 figures

References in corpus (3)

• Low-temperature spin relaxation in n-type GaAs
• Manipulation of the Spin Memory of Electrons in n-GaAs
• Antiferromagnetic s-d exchange coupling in GaMnAs

Cited by in corpus (12)

• Spin dynamics in semiconductors
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
• Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
• Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
• Kondo screening regimes of a quantum dot with a single Mn ion
• Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence
• Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers
• Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Sign-reversal electron magnetization in Mn-doped semiconductor structures