Low-temperature spin relaxation in n-type GaAs

Abstract

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction

References in corpus (3)

• Electron spin relaxation by nuclei in semiconductor quantum dots
• Electron spin decoherence in quantum dots due to interaction with nuclei
• Manipulation of the Spin Memory of Electrons in n-GaAs

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