Spin relaxation in the impurity band of a semiconductor in the external magnetic field
arXiv:0708.3617 · doi:10.1134/S0021364008240089
Abstract
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted transitions between Zeeman sublevels of the ground state of an isolated impurity, while other mechanisms can be described in terms of spin precession in a random magnetic field during the electron motion over the impurity band. In the later case there are two contributions to the spin relaxation: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to the electron motion on a large scale. The average spin relaxation rate is calculated.
References in corpus (11)
- Spintronics: Fundamentals and applications
- Non-ballistic spin field-effect transistor
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
- Low-temperature spin relaxation in n-type GaAs
- Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
- Dynamical spin-electric coupling in a quantum dot
- Manipulation of the Spin Memory of Electrons in n-GaAs
- Dyakonov-Perel spin relaxation near metal-insulator transition and in hopping transport
- Spin relaxation and antisymmetric exchange in n-doped III-V semiconductor
- Theory of Optical Orientation in n-Type Semiconductors
- Millisecond spin-flip times of donor-bound electrons in GaAs