Spin relaxation of localized electrons in n-type semiconductors

Abstract

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.

Submitted to the special issue "Optical Orientation", Semiconductor Science and Technology

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• Theory of anisotropic exchange in laterally coupled quantum dots
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• GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs
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• Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
• Theory of spin inertia in singly-charged quantum dots
• The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors
• Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells
• Spin noise of localized electrons: Interplay of hopping and hyperfine interaction
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• Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems
• Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping
• Effect of exchange interaction on the spin fluctuations of localized electrons
• Nuclear spin warm-up in bulk n-GaAs
• Optical Orientation in Ferromagnet/Semiconductor Hybrids
• Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature
• Electron charge and spin delocalization revealed in the optically probed longitudinal and transverse spin dynamics in $n$-GaAs
• Quantum Interference Controls the Electron Spin Dynamics in n-GaAs
• Theory of Electron Spin Relaxation in n-Doped Quantum Wells
• Microscopic dynamics of electron hopping in a semiconductor quantum well probed by spin-dependent photon echoes
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• Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations
• Optical measurement of electron spins in quantum dots: Quantum Zeno effects
• Hall effect driven by non-collinear magnetic polarons in diluted magnetic semiconductors
• Universal power law decay of spin polarization in double quantum dot
• Transition from spin-orbit to hyperfine dominated spin relaxation in a cold fluid of dipolar excitons
• Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
• Electron-induced nuclear magnetic ordering in n-type semiconductors
• Electric current noise in mesoscopic organic semiconductors
• Nonexponential spin decay in a quantum kinetic description of the D'yakonov-Perel' mechanism mediated by impurity scattering
• Spin-related phenomena in two-dimensional hopping regime in magnetic field
• Anomalous magnetic suppression of spin relaxation in a two-dimensional electron gas in a GaAs/AlGaAs quantum well
• Electric field effect on electron gas spins in two-dimensional magnets with strong spin-orbit coupling
• Suppressing quantum effects by optically driven nonequilibrium phonons
• Long-lived electron spin coherence in Ga-doped crystals at room temperature
• Long-range influence of manipulating disordered-insulators locally
• Subsecond nuclear spin dynamics in $n$-GaAs