Nuclear spin relaxation in n-GaAs: from insulating to metallic regime
arXiv:1612.01699 · doi:10.1103/PhysRevB.95.125312
Abstract
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic field. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to drive nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to micro and nanostructures.
arXiv comment11 pages, 4 figures
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Cited by in corpus (14)
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- Simultaneous measurements of nuclear spin heat capacity, temperature and relaxation in GaAs microstructures
- Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
- Nuclear spin cooling by helicity-alternated optical pumping at weak magnetic fields in -GaAs
- Anomalous light-induced broadening of the spin-noise resonance in cesium vapor
- High-efficiency optical pumping of nuclear polarization in a GaAs quantum well
- Kinetic approach to the nuclear-spin polaron formation
- Nuclear spin-lattice relaxation in p-type GaAs
- Subsecond nuclear spin dynamics in -GaAs
- Slowly generated anomalously large nuclear field in bulk n-AlGaAs
- Nuclear spin polaron-formation: anisotropy effects and quantum phase transition