Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping

Abstract

We present a systematic theoretical study of spin-dependent recombination and its effect on optical orientation of photoelectron spins in semiconductors with deep paramagnetic centers. For this aim we generalize the Shockley-Read theory of recombination of electrons and holes through the deep centers with allowance for optically-induced spin polarization of free and bound electrons. Starting from consideration of defects with three charge states we turn to the two-charge-state model possessing nine parameters and show that it is compatible with available experimental data on undoped GaAsN alloys. In the weak- and strong-pumping limits, we derive simple analytic equations which are useful in prediction and interpretation of experimental results. Experimental and theoretical dependencies of the spin-dependent-recombination ratio and degree of photoluminescence circular polarization on the pumping intensity and the transverse magnetic field are compared and discussed.

22 pages, 8 figures, submitted to Journal of Physics: Condensed Matter

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• Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature
• Electron-nuclear spin dynamics of Ga${}^{2+}$ paramagnetic centers probed by spin dependent recombination: A master equation approach
• Electron-nuclear coherent spin oscillations probed by spin dependent recombination
• Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga${}^{2+}$ centers
• Polarization sensitive photodectector based on GaAsN
• Machine learning assisted GaAsN circular polarimeter
• Deep-level structure of the spin-active recombination center in dilute nitrides