Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
arXiv:1010.1039 · doi:10.1103/PhysRevB.83.165202
Abstract
A theoretical and experimental study of the spin-dependent photoconductivity in dilute Nitride GaAsN is presented. The non linear transport model we develop here is based on the rate equations for electrons, holes, deep paramagnetic and non paramagnetic centers both under CW and pulsed optical excitation. Emphasis is given to the effect of the competition between paramagnetic centers and non paramagnetic centers which allows us to reproduce the measured characteristics of the spin-dependent recombination power dependence. Particular attention is paid to the role of an external magnetic field in Voigt geometry. The photoconductivity exhibits a Hanle-type curve whereas the spin polarization of electrons shows two superimposed Lorentzian curves with different widths, respectively related to the recombination of free and trapped electrons. The model is capable of reproducing qualitatively and quantitatively the most important features of photoluminescence and photocurrent experiments and is helpful in providing insight on the various mechanisms involved in the electron spin polarization and filtering in GaAsN semiconductors.
arXiv comment10 pages, 5 figures
References in corpus (5)
- Magnetoresistance due to edge spin accumulation
- Spin-dependent recombination in GaAsN alloys
- Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature
- Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors
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Cited by in corpus (12)
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- Chiral photodetector based on GaAsN
- Electron-nuclear spin dynamics of Ga paramagnetic centers probed by spin dependent recombination: A master equation approach
- Electron-nuclear coherent spin oscillations probed by spin dependent recombination
- Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga centers
- Polarization sensitive photodectector based on GaAsN
- Machine learning assisted GaAsN circular polarimeter
- A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
- Deep-level structure of the spin-active recombination center in dilute nitrides