Deep-level structure of the spin-active recombination center in dilute nitrides

Abstract

A Gallium interstitial defect (Ga${}_{\text{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs${}_{1-x}$N${}_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga${}_{\text{i}}$ defect's local chemical environment.

6 pages, 5 figures plus Supplementary Material

References in corpus (2)

• Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
• A systematic study of spin-dependent recombination in GaAs${}_{1-x}$N${}_x$ as a function of nitrogen content