2 papers
physics.app-ph2020
Piezoresistance in defect-engineered silicon
H. Li, A. Thayil, C. T. K. Lew +5
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a functio…
cond-mat.mtrl-sci2018
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
D. A. Broadway, N. Dontschuk, A. Tsai +8
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precisi…