113 citations · 116 across the 7 of their papers we have counts for
7 papers
Power sensitivity of broadband radiofrequency detectors based on quantum diamond spins
Nicholas Gillespie, Christopher T. -K. Lew, Ryan Kinsella +4
Nitrogen-vacancy (NV) centres in diamond can be used to detect radiofrequency (RF) signals through coupling of the RF magnetic field with the NV spins, combined with optical readou…
Electrically detected magnetic resonance of As magnetic clock transitions in silicon
Ravi Acharya, Shao Qi Lim, Brett C. Johnson +9
Magnetic clock transitions (CTs), defined by vanishing first-order sensitivity of the transition frequency to magnetic field fluctuations, provide a powerful route to suppress deco…
Real-time Amplitude and Phase Estimation of AC Fields with Diamond Spins
Christopher T. -K. Lew, Samuel A. Wilkinson, Nicholas Gillespie +3
Nitrogen-vacancy centers in diamond have been shown to be capable of detecting AC magnetic fields with high sensitivity, spectral resolution, and spatial resolution. However, most…
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
Piezoresistance in defect-engineered silicon
H. Li, A. Thayil, C. T. K. Lew +5
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a functio…
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
D. A. Broadway, N. Dontschuk, A. Tsai +8
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precisi…
Giant, anomalous piezo-impedance of silicon-on-insulator
Heng Li, Christopher Tao-Kuan Lew, Brett Johnson +3
A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response…