Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
arXiv:1809.04779 · doi:10.1038/s41928-018-0130-0
Abstract
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.
This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-0
References in corpus (30)
- Quantum sensing
- The nitrogen-vacancy colour centre in diamond
- Sensing electric fields using single diamond spins
- Magnetometry with nitrogen-vacancy defects in diamond
- Quantum computing with defects
- Probing condensed matter physics with magnetometry based on nitrogen-vacancy centres in diamond
- Theory of the ground state spin of the NV- center in diamond: I. Fine structure, hyperfine structure, and interactions with electric, magnetic and strain fields
- Theory of the ground state spin of the NV- center in diamond: II. Spin solutions, time-evolution, relaxation and inhomogeneous dephasing
- Chemical control of the charge state of nitrogen-vacancy centers in diamond
- Chip-scale nanofabrication of single spins and spin arrays in diamond
- Engineering shallow spins in diamond with nitrogen delta-doping
- Quantum imaging of current flow in graphene
- Control and Local Measurement of the Spin Chemical Potential in a Magnetic Insulator
- Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond
- Observation of an environmentally insensitive solid state spin defect in diamond
- Probing surface noise with depth-calibrated spins in diamond
- On the surface paramagnetism of diamond
- Electrically and mechanically tunable electron spins in silicon carbide color centers
- Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces
- Detection of a single fundamental charge with nanoscale resolution in ambient conditions using the NV center in diamond
- NMR Technique for Determining the Depth of Shallow Nitrogen-Vacancy Centers in Diamond
- Tailoring spin defects in diamond
- Nanoscale imaging of current density with a single-spin magnetometer
- Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond
- Charge dynamics in near-surface, variable-density ensembles of nitrogen-vacancy centers in diamond
- Electrometry by optical charge conversion of deep defects in 4H-SiC
- Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
- Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
- Low dimensionality of the diamond surface conductivity
- Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography
Cited by in corpus (42)
- Electrical and optical control of single spins integrated in scalable semiconductor devices
- CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor
- Nanoscale electric-field imaging based on a quantum sensor and its charge-state control under ambient condition
- CVD diamond single crystals with NV centres: a review of material synthesis and technology for quantum sensing applications
- Diamond surface engineering for molecular sensing with nitrogen-vacancy centers
- Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
- Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
- Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
- Improved current density and magnetisation reconstruction through vector magnetic field measurements
- Optically Enhanced Electric Field Sensing Using Nitrogen-Vacancy Ensembles
- Laser modulation of superconductivity in a cryogenic widefield nitrogen-vacancy microscope
- Nanoscale electrometry based on a magnetic-field-resistant spin sensor
- Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond
- Imaging graphene field-effect transistors on diamond using nitrogen-vacancy microscopy
- Vector Electrometry in a Wide-Gap Semiconductor Device Using a Spin Ensemble Quantum Sensor
- Imaging ferroelectric domains with a single-spin scanning quantum sensor
- The Role of Electrolytes in the Relaxation of Near-Surface Spin Defects in Diamond
- Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
- Low temperature photo-physics of single NV centers in diamond
- Comparison of different methods of nitrogen-vacancy layer formation in diamond for widefield quantum microscopy
- Spin dynamics of a solid-state qubit in proximity to a superconductor
- Apparent delocalisation of the current flow in metallic wires observed with diamond nitrogen-vacancy magnetometry
- Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
- Near-infrared excitation of nitrogen-doped ultrananocrystalline diamond photoelectrodes in saline solution
- A solution to electric-field screening in diamond quantum electrometers
- Quantum Electrometer for Time-Resolved Material Science at the Atomic Lattice Scale
- Kilohertz electron paramagnetic resonance spectroscopy of single nitrogen centers at zero magnetic field
- Magnetic noise from ultra-thin abrasively deposited materials on diamond
- Enhancement of quantum coherence in solid-state qubits via interface engineering
- Quantum bath control with nuclear spin state selectivity via pulse-adjusted dynamical decoupling
- Quantum enhanced electric field mapping within semiconductor devices
- Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
- Aberration control in quantitative widefield quantum microscopy
- Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
- Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond
- Photoinduced charge injection from shallow point defects in diamond into water
- Near-zero-field microwave-free magnetometry with nitrogen-vacancy centers in nanodiamonds
- Sensing electrochemical signals using a nitrogen-vacancy center in diamond
- On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond
- Widefield quantum microscopy with nitrogen-vacancy centers in diamond: strengths, limitations, and prospects
- Enhanced widefield quantum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays
- Materials and Spin Characteristics of Nanodiamonds Partially Covered with Amino Groups and Embedded with Nitrogen-Vacancy Color Centers