Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Abstract

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.

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• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Scalable quantum memory nodes using nuclear spins in Silicon Carbide
• Thermal evolution of silicon carbide electronic bands
• Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
• Precise characterization of a silicon carbide waveguide fiber interface
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
• Requirements on Quantum Superpositions of Macro-Objects for Sensing Neutrinos
• Electrically-triggered spin-photon devices in silicon
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Quantum enhanced electric field mapping within semiconductor devices
• Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Stability and molecular pathways to the formation of spin defects in silicon carbide
• Spin-photon Qubits for Scalable Quantum Network