675 citations · 5.2k across the 54 of their papers we have counts for
54 papers
Boron-related defects in n-type 4H-SiC Schottky barrier diodes
Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…
Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
Naoya Morioka, Di Liu, Öney O. Soykal +8
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integrati…
The Anomalous Formation of Irradiation Induced Nitrogen-Vacancy Centers in 5-Nanometer-Sized Detonation Nanodiamonds
Frederick T. -K. So, Alexander I. Shames, Daiki Terada +11
Nanodiamonds containing negatively charged nitrogen-vacancy (NV) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding…
The M-center in 4H-SiC is a carbon self-interstitial
J. Coutinho, J. D. Gouveia, T. Makino +5
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of ele…
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin +13
Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing applicati…
Silicon carbide diodes for neutron detection
José Coutinho, Vitor J. B. Torres, Ivana Capan +11
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from app…