123 citations · 470 across the 8 of their papers we have counts for
8 papers · 1 filter
The M-center in 4H-SiC is a carbon self-interstitial
J. Coutinho, J. D. Gouveia, T. Makino +5
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of ele…
Influence of irradiation on defect spin coherence in silicon carbide
C. Kasper, D. Klenkert, Z. Shang +10
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum propert…
Acceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Ivana Capan, Tomislav Brodar, José Coutinho +3
We provide direct evidence that the broad Z peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged -SiC, has two compo…
NV- - N+ pair centre in 1b diamond
Neil B. Manson, Morgan Hedges, Michael S +6
The study establishes that the degree of optically induced spin polarization that can be achieved for NVin 1b diamond is limited by the concentration of single substitutional…
Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride
Hanh Ngoc My Duong, Minh Anh Phan Nguyen, Mehran Kianinia +7
Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irra…
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…