The M-center in 4H-SiC is a carbon self-interstitial

Abstract

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.

References in corpus (6)

• Quantum computing with defects
• Ab initio study of the migration of intrinsic defects in 3C-SiC
• Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
• Quantum well stabilized point defect spin qubits

Cited by in corpus (3)

• Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC
• M-center in low-energy electron irradiated 4H-SiC
• Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS