18 citations · 34 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2021★ 18 cited
The M-center in 4H-SiC is a carbon self-interstitial
J. Coutinho, J. D. Gouveia, T. Makino +5
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of ele…
cond-mat.mtrl-sci2017★ 3 cited
A comment on "Different STM Images of the Superstructure on a Clean Si(133)-6x2 Surface" (JETP Letters 105 (8), 477-483 (2017))
R. Zhachuk, J. Coutinho
In the recent paper by Teys [JETP Letters 105 (8), 477-483 (2017)], an atomic model for the Si(331) reconstructed surface (hereby referred to as T-model) was proposed on the basis…
cond-mat.mtrl-sci2017★ 13 cited
Si(111) strained layers on Ge(111): evidence for c(2x4) domains
R. Zhachuk, J. Coutinho, A. Dolbak +2
The tensile strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low energy electron diffraction and first-principles…