Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide

Abstract

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

arXiv comment8 pages, 5 figures

References in corpus (18)

• Coherent control of single spins in silicon carbide at room temperature
• Deterministic delivery of remote entanglement on a quantum network
• Deterministic Generation of a Cluster State of Entangled Photons
• First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre
• Theory of Spin-Conserving Excitation of the $N-V^{-}$ Center in Diamond
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Electron-phonon processes of the silicon-vacancy centre in diamond
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
• Optical thermometry based on level anticrossing in silicon carbide
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
• Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
• Spin-photon entanglement interfaces in silicon carbide defect centers
• Scalable spin-photon entanglement by time-to-polarization conversion

Cited by in corpus (32)

• Integrated quantum photonics with silicon carbide: challenges and prospects
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations
• Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
• Novel color center platforms enabling fundamental scientific discovery
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• Exhaustive characterization of modified Si vacancies in 4H-SiC
• Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Single-Shot Readout of a Nuclear Spin in Silicon Carbide
• The M-center in 4H-SiC is a carbon self-interstitial
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
• Precise characterization of a silicon carbide waveguide fiber interface
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Methods to Accelerate High-Throughput Screening of Atomic Qubit Candidates in van der Waals Materials
• Optical line shapes of color centers in solids from classical autocorrelation functions
• Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide
• Monolithic 4H-SiC nanomechanical resonators with high intrinsic quality factors
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature
• Acoustically induced coherent spin trapping
• Elastic properties of cubic silicon carbide with Si vacancies