Methods to Accelerate High-Throughput Screening of Atomic Qubit Candidates in van der Waals Materials
arXiv:2012.01223 · doi:10.1063/5.0048833
Abstract
The discovery of atom-like spin emitters associated with defects in two-dimensional (2D) wide-bandgap (WBG) semiconductors presents new opportunities for highly tunable and versatile qubits. So far, the study of such spin emitters has focused on defects in hexagonal boron nitride (hBN). However, hBN necessarily contains a high density of nuclear spins, which are expected to create a strong incoherent spin-bath that leads to poor coherence properties of spins hosted in the material. Therefore, identification of new qubit candidates in other 2DWBG materials is necessary. Given time demands of methods, new approaches for rapid screening and calculation of identifying properties of suitable atom-like qubits are required. In this work, we present two new methods for rapid estimation of the zero-phonon line (ZPL), a key property of atomic qubits in WBG materials. First, this ZPL is calculated by exploiting Janak's theorem. For finite changes in occupation, we provide the leading-order estimate of the correction to the ZPL obtained using Janak's theorem, which is more rapid than the standard method (SCF). Next, we also demonstrate an approach to converging excited states that is faster for systems with small strain than the standard approach used in the SCF method. We illustrate these methods using the case of the singly negatively charged calcium vacancy in SiS, which we are the first to propose as a qubit candidate. This work has the potential to assist in accelerating the high-throughput search for quantum defects in materials, with applications in quantum sensing and quantum computing.
References in corpus (37)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Van der Waals heterostructures
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- The nitrogen-vacancy colour centre in diamond
- Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
- How does quantum confinement influence the electronic structure of transition metal sulfides TmS2
- The Computational 2D Materials Database: High-Throughput Modeling and Discovery of Atomically Thin Crystals
- Quantum computing with defects
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Solid-state electronic spin coherence time approaching one second
- Recent Progress of the Computational 2D Materials Database (C2DB)
- Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
- Ab initio supercell calculations on nitrogen-vacancy center in diamond: its electronic structure and hyperfine tensors
- Color centers in hexagonal boron nitride monolayers: A group theory and ab-initio analysis
- Imaging stress and magnetism at high pressures using a nanoscale quantum sensor
- Controlling the coherence of a diamond spin qubit through strain engineering
- PyCDT: A Python toolkit for modeling point defects in semiconductors and insulators
- Magnetic measurements on micron-size samples under high pressure using designed NV centers
- Optical and microwave control of germanium-vacancy center spins in diamond
- All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
- Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
- Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
- Quantum sensing of local magnetic field texture in strongly correlated electron systems under extreme conditions
- Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
- Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
- Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
- Low-energy Electron Reflectivity from Graphene
- Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
- Nonvolatile quantum memory enables sensor unlimited nanoscale spectroscopy of finite quantum systems
- The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
- Electronic structure of the neutral silicon-vacancy center in diamond
- Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
- Accurate formation energies of charged defects in solids: a systematic approach
- ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
- How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics