Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide

Abstract

Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical and microwave transitions. For such applications, the efficient initialization of the spin state is necessary. We develop a theoretical description of the spin polarization process by using the intersystem crossing of the silicon vacancy defect, which is enabled by a combination of optical driving, spin-orbit coupling, and interaction with vibrational modes. By using distinct optical drives, we analyze two spin polarization channels. Interestingly, we find that different spin projections of the ground state manifold can be polarized. This work helps to understand initialization and readout of the silicon vacancy and explains some existing experiments with the silicon vacancy center in SiC.

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• Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
• Local vibrational modes of Si vacancy spin qubits in SiC
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
• Methods to Accelerate High-Throughput Screening of Atomic Qubit Candidates in van der Waals Materials
• Qubit guidelines for solid-state spin defects
• Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics
• Acoustically induced coherent spin trapping
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields