Spin-photon entanglement interfaces in silicon carbide defect centers

Abstract

Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

Published version

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• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Novel color center platforms enabling fundamental scientific discovery
• Local vibrational modes of Si vacancy spin qubits in SiC
• Generation of arbitrary all-photonic graph states from quantum emitters
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Photonic graph state generation from quantum dots and color centers for quantum communications
• Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• High quality-factor diamond-confined open microcavity
• Hyperbolic Metamaterial Resonator-Antenna Scheme for Large, Broadband Emission Enhancement and Single Photon Collection
• Frequency-encoded linear cluster states with coherent Raman photons
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• Spin-augmented observables for efficient photonic quantum error correction
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications
• Spin-photon Qubits for Scalable Quantum Network