Quantum Information Processing With Integrated Silicon Carbide Photonics

Abstract

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing, in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies have amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.

References in corpus (31)

• Resource-efficient linear optical quantum computation
• Coherent control of single spins in silicon carbide at room temperature
• Realization of a multi-node quantum network of remote solid-state qubits
• Topological fault-tolerance in cluster state quantum computation
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
• Quantum Many-Body Phenomena in Coupled Cavity Arrays
• A photonic cluster state machine gun
• Tin-Vacancy Quantum Emitters in Diamond
• Fault-tolerant operation of a logical qubit in a diamond quantum processor
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Efficient Distributed Quantum Computing
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Optically generated 2-dimensional photonic cluster state from coupled quantum dots
• Optical charge state control of spin defects in 4H-SiC
• Optical parametric oscillation in silicon carbide nanophotonics
• Optical polarization of nuclear spins in silicon carbide
• Cavity quantum electrodynamics with color centers in diamond
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Optically coherent nitrogen-vacancy centers in μm-thin etched diamond membranes
• Prospects for measurement-based quantum computing with solid state spins
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
• Photon blockade in weakly-driven cavity QED systems with many emitters
• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Optimal approach to quantum communication using dynamic programming
• Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
• Spin-photon entanglement interfaces in silicon carbide defect centers
• Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Stress-controlled zero-field spin splitting in silicon carbide

Cited by in corpus (5)

• Single-Shot Readout of a Nuclear Spin in Silicon Carbide
• The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
• Degeneracy-breaking and Long-lived Multimode Microwave Electromechanical Systems Enabled by Cubic Silicon-Carbide Membrane Crystals
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Low frequency signal detection via correlated Ramsey measurements