Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam

Abstract

In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few tens of nanometers, defined by the diameter of the ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si++ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

References in corpus (21)

• Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Room temperature entanglement between distant single spins in diamond
• Scalable quantum register based on coupled electron spins in a room temperature solid
• Polytype control of spin qubits in silicon carbide
• A single NV defect coupled to a nanomechanical oscillator
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
• Single-photon emitting diode in silicon carbide
• Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
• Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
• Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
• Optical thermometry based on level anticrossing in silicon carbide
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Maskless and targeted creation of arrays of colour centres in diamond using focused ion beam technology
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
• Cavity-enhanced measurements of defect spins in silicon carbide

Cited by in corpus (16)

• Detection of single W-centers in silicon
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Influence of irradiation on defect spin coherence in silicon carbide
• Novel color center platforms enabling fundamental scientific discovery
• Local vibrational modes of Si vacancy spin qubits in SiC
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• High-Q/V two-dimensional photonic crystals cavities in 3C-SiC
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Gate-tunable single-photon electroluminescence of color centers in silicon carbide
• Single-Molecule Doped Crystalline Nanosheets for Delicate Photophysics Studies and Directional Single-Photon Emitting Devices
• A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies
• Stability and molecular pathways to the formation of spin defects in silicon carbide