Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Abstract

Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing.

References in corpus (26)

• Quantum sensing
• Magnetometry with nitrogen-vacancy defects in diamond
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• A solid-state entangled photon pair source with high brightness and indistinguishability
• Polytype control of spin qubits in silicon carbide
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
• Single-photon emitting diode in silicon carbide
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
• Sensing and atomic-scale structure analysis of single nuclear spin clusters in diamond
• Deterministic generation of all-photonic quantum repeaters from solid-state emitters
• Towards Realizing a Quantum Memory for a Superconducting Qubit: Storage and Retrieval of quantum states
• Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
• Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
• Electrically driven optical interferometry with spins in silicon carbide
• Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study
• Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Optical switching of resonance fluorescence from a single germanium vacancy color center in diamond
• Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Cited by in corpus (12)

• Universal coherence protection in a solid-state spin qubit
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• A telecom O-band emitter in diamond
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Laser writing and spin control of near infrared emitters in silicon carbide
• 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Roadmap on Integrated Quantum Photonics
• Maximizing information obtainable by quantum sensors through the Quantum Zeno Effect
• Stability and molecular pathways to the formation of spin defects in silicon carbide